0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features npn silicon absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage v ceo 140 v collector-base voltage v cbo 160 v emitter-base voltage v ebo 6v collector current -continuous i c 600 ma total device dissipation fr-5 board *1 @ta = 25 p d 225 mw derate above 25 1.8 mw/ thermal resistance, junction-to-ambient r ja 556 /w total device dissipation alumina substrate *2 @ta = 25 p d 300 mw derate above 25 2.4 mw/ thermal resistance, junction-to-ambient r ja 417 /w junction and storage temperature t j ,t stg -55to+150 * 1. fr-5 = 1.0 x 0.75 x 0.062 in. * 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sales@twtysemi.com 1 of 2 http://www.twtysemi.com MMBT5550 product specification 4008-318-123
MMBT5550 marking marking m1f electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector?emitter breakdown voltage * v (br)ceo i c =1.0ma,i b = 0 140 v collector?base breakdown voltage v (br)cbo i c = 100 a, i e = 0 160 v emitter ?base breakdown voltage v (br)ebo i e =10a,i c =0 6 v v cb = 100 v, i e = 0 100 na v cb = 100 v, i e = 0, ta = 100 100 a emitter cutoff current i ebo v eb =4.0v,i c = 0 50 na i c =1.0ma,v ce =5v 60 i c =10ma,v ce = 5 v 60 250 i c =50ma,v ce =5v 20 i c =10ma,i b = 1.0 ma 0.15 v i c =50ma,i b = 5.0 ma 0.25 v i c =10ma,i b =1.0ma 1.0 v i c =50ma,i b =5.0ma 1.2 v v cb = 10 v 50 na v cb = 75 v 100 na * pulse test: pulse width = 300 s, duty cycle=2.0%. v ce(sat) v be(sat) i ces collector emitter cut-off base-emitter saturation voltage collector-emitter saturation voltage i cbo collector cutoff current h fe dc current gain sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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